Design and Methodology of Silicon Carbide High Voltage Termination Extension for Small Area BJTs

نویسندگان

چکیده

An optimized termination extension tutorial is reported for a small area (≈ 1mm 2 ) 4H-SiC NPN BJT. The system based on parametric JTE with isolation rings. Additional aspects such as (1) MESA angle, (2) relieving electric field the base-drift junction, and (3) blocking from reaching border structure are investigated. A breakdown voltage greater than 10 kV recorded, when drift region n-doped to 8x10 14 cm-3.

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ژورنال

عنوان ژورنال: Materials Science Forum

سال: 2022

ISSN: ['1422-6375', '0250-9776', '0255-5476', '1662-9752', '1662-9760']

DOI: https://doi.org/10.4028/p-vms03o